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  zxtn2010z da tasheet number: ds33661 rev. 4 - 2 1 of 7 www.diodes.com may 2013 ? diodes incorporated zxtn2010z a product line o f diodes incorporated 60v npn low saturation medium power transistor in sot89 features ? bv ceo > 60v ? i c = 5a high continuous current ? r sat = 30m? for a low equivalent on-resistance ? low saturation voltage v ce(sat) < 65mv @ i c = 1a ? h fe specified up to 10a for high current gain hold up ? complementary pnp type: zxtp2012z ? lead-free finish; rohs compliant (notes 1 & 2) ? halogen and antimony free. ?green? device (note 3) ? qualified to aec-q101 standards for high reliability ? ppap capable (note 4) application ? emergency lighting circuits ? motor driving (including dc fans) ? backlight inverters ? power switches ? gate driving mosfets and igbts mechanical data ? case: sot89 ? case material: molded plasti c. ?green? molding compound. ? ul flammability rating 94v-0 ? moisture sensitivity: level 1 per j-std-020 ? terminals: finish - matte ti n plated leads, solderable per mil-std-202, method 208 ? weight: 0.05 grams (approximate) ordering information (note 5) product compliance marking reel size (inches) tape width (mm) quantity per reel zxtn2010zta aec-q101 851 7 12 1,000 zxtn2010z-13r aec-q101 851 13 12 4,000 zxtn2010zqta automotive 851 7 12 1,000 notes: 1. eu directive 2002/95/ec (rohs) & 2011/65/eu (roh s 2) compliant. all applicable rohs exemptions applied. 2. see http://www.diodes.com/quality/lead_free.html for more in formation about diodes incorporated?s definitions of halogen- a nd antimony-free, "green" and lead-free. 3. halogen- and antimony-free "green? products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total br + cl) and <1000ppm antimony compounds. 4. automotive products are aec-q101 qualified and are ppap capable. automotive, aec-q101 and standard products are electrically a nd thermally the same, except where specified. for more information, please refer to http://www.diodes.c om/quality/product_compliance_defin itions/. 5. for packaging details, go to our website at http?//www.diodes.com/products/packages.html. marking information 851 = product type marking code ? green top view device symbol top view pin out sot89 c e c b c e b 851
zxtn2010z da tasheet number: ds33661 rev. 4 - 2 2 of 7 www.diodes.com may 2013 ? diodes incorporated zxtn2010z a product line o f diodes incorporated maximum ratings (@t a = +25c, unless otherwise specified.) characteristic symbol value unit collector-base voltage v cbo 150 v collector-emitter voltage v ceo 60 v emitter-base voltage v ebo 7 v continuous collector current i c 5 a peak pulse current i cm 20 a thermal characteristics (@t a = +25c, unless otherwise specified.) characteristic symbol value unit power dissipation (note 6) linear derating factor p d 1.5 12 w mw/c power dissipation (note 7) linear derating factor p d 2.1 16.8 w mw/c ? thermal resistance, junction to ambient (note 6) r ja 83 c/w ? thermal resistance, junction to ambient (note 7) r ja 60 c/w thermal resistance, junction to leads (note 8) r jl 3.23 c/w operating and storage temperature range t j, t stg -55 to +150 c esd ratings (note 9) characteristic symbol value unit jedec class electrostatic discharge - human body model esd hbm 4,000 v 3a electrostatic discharge - machine model esd mm 400 v c notes: 6. for a device mounted with the exposed collector pad on 25mm x 25mm 1oz copper that is on a single-sided 1.6mm fr4 pcb ; device is measured under still air conditions whilst operating in a steady-state. 7. same as note (6), except the dev ice is mounted on 50mm x 50mm 1oz copper. 8. thermal resistance from junction to solder-point (on the exposed collector pad). 9. refer to jedec specification jesd22-a114 and jesd22-a115.
zxtn2010z da tasheet number: ds33661 rev. 4 - 2 3 of 7 www.diodes.com may 2013 ? diodes incorporated zxtn2010z a product line o f diodes incorporated thermal characteristics and derating information 100m 1 10 100 10m 100m 1 10 single pulse. t amb =25c 25x25mm 1oz cu v ce(sat) limit 100s 1ms 10ms 100ms 1s dc safe operating area i c collector current (a) v ce collector-emitter voltage (v) 0 20406080100120140160 0.0 0.5 1.0 1.5 2.0 25x25mm 1oz cu 50x50mm 1oz cu derating curve temperature (c) max power dissipation (w) 100 1m 10m 100m 1 10 100 1k 0 20 40 60 80 25x25mm 1oz cu transient thermal impedance d=0.5 d=0.2 d=0.1 single pulse d=0.05 thermal resistance (c/w) pulse width (s) 100 1m 10m 100m 1 10 100 1k 1 10 100 single pulse. t amb =25c 25x25mm 1oz cu pulse power dissipation pulse width (s) max power dissipation (w)
zxtn2010z da tasheet number: ds33661 rev. 4 - 2 4 of 7 www.diodes.com may 2013 ? diodes incorporated zxtn2010z a product line o f diodes incorporated electrical characteristics (@t a = +25c, unless otherwise specified.) characteristic symbol min typ max unit test condition collector-base breakdown voltage bv cbo 150 190 ? v i c = 100a collector-emitter breakdown voltage (note 10) bv cer 150 190 ? v i c = 1a, r b 1k ? collector-emitter breakdown voltage (note 10) bv ceo 60 80 ? v i c = 10ma emitter-base breakdown voltage bv ebo 7 8.1 ? v i e = 100a collector cutoff current i cbo ? < 1 50 500 na na v cb = 120v v cb = 120v, t a = +100c collector cutoff current i cer r 1k ? ? < 1 100 500 na na v cb = 120v v cb = 120v, t a = +100c emitter cutoff current i ebo ? < 1 10 na v eb = 6v dc current transfer static ratio (note 10) h fe 100 200 ? ? i c = 10ma, v ce = 1v 100 200 300 i c = 2a, v ce = 1v 55 105 ? i c = 5a, v ce = 1v 20 40 ? i c = 10a, v ce = 1v collector-emitter saturation voltage (note 10) v ce(sat) ? 17 30 mv i c = 100ma, i b = 5ma ? 35 55 i c = 1a, i b = 100ma ? 40 65 i c = 1a, i b = 50ma ? 90 125 i c = 2a, i b = 50ma ? 170 230 i c = 6a, i b = 300ma base-emitter saturation voltage (note 10) v be ( sat ) ? 970 1100 mv i c = 6a, i b = 300ma base-emitter turn-on voltage (note 10) v be ( on ) ? 910 1050 mv i c = 6a, v ce = 1v transitional frequency f t ? 130 ? mhz i c = 100ma, v ce = 10v, f = 50mhz output capacitance c obo ? 31 ? pf v cb = 10v, f = 1mhz, switching time t on ? 42 ? ns v cc = 10v, i c = 1a, i b1 = i b2 = 100ma t off 760 note: 10. measured under pulsed conditions. pulse width 300 s. duty cycle 2%.
zxtn2010z da tasheet number: ds33661 rev. 4 - 2 5 of 7 www.diodes.com may 2013 ? diodes incorporated zxtn2010z a product line o f diodes incorporated typical electrical characteristics (@t a = +25c, unless otherwise specified.) 1m 10m 100m 1 10 10m 100m 1 1m 10m 100m 1 10 0.0 0.1 0.2 0.3 0.4 0.5 0.6 1m 10m 100m 1 10 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1m 10m 100m 1 10 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1m 10m 100m 1 10 0.4 0.6 0.8 1.0 1.2 1.4 0 50 100 150 200 250 v ce(sat) v i c tamb=25c i c /i b =50 i c /i b =20 i c /i b =10 v ce(sat) (v) i c collector current (a) v be(sat) v i c i c /i b =10 100c 25c -55c v ce(sat) (v) i c collector current (a) h fe v i c v ce =1v -55c 25c 100c normalised gain i c collector current (a) 25c v ce(sat) v i c i c /i b =10 100c -55c v be(sat) (v) i c collector current (a) v be(on) v i c v ce =1v 100c 25c -55c v be(on) (v) i c collector current (a) typical gain (h fe )
zxtn2010z da tasheet number: ds33661 rev. 4 - 2 6 of 7 www.diodes.com may 2013 ? diodes incorporated zxtn2010z a product line o f diodes incorporated package outline dimensions please see ap02002 at http://www.diodes.com /datasheets/ap02002.pdf for latest version. suggested pad layout please see ap02001 at http://www.diodes.com/dat asheets/ap02001.pdf for the latest version. sot89 dim min max a 1.40 1.60 b 0.44 0.62 b1 0.35 0.54 c 0.35 0.44 d 4.40 4.60 d1 1.62 1.83 e 2.29 2.60 e 1.50 typ h 3.94 4.25 h1 2.63 2.93 l 0.89 1.20 all dimensions in mm dimensions value (in mm) x 0.900 x1 1.733 x2 0.416 y 1.300 y1 4.600 y2 1.475 y3 0.950 y4 1.125 c 1.500 y1 x1 y2 y c x (3x) y3 y4 x2 (2x) e h d1 b1 b e c l a d 8 (4x) h 1 r 0 . 2 0 0
zxtn2010z da tasheet number: ds33661 rev. 4 - 2 7 of 7 www.diodes.com may 2013 ? diodes incorporated zxtn2010z a product line o f diodes incorporated important notice diodes incorporated makes no warranty of any kind, express or implied, with regards to this document, including, but not limited to, the implied warranties of merchantability and fitness for a particular purpose (and their equivalents under the laws of any jurisdiction). diodes incorporated and its subsidiaries rese rve the right to make modifications, enhancements, improvements, corrections or ot her changes without further notice to this document and any product descri bed herein. diodes incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does diodes incorporated convey any license under its patent or trademark rights, nor the rights of others. any customer or user of this document or products described herein in such applica tions shall assume all risks of such use and will agree to hold diodes incorporated and all the companies whose products are represented on diodes incorporated website, harmless against all damages. diodes incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthoriz ed sales channel. should customers purchase or use diodes inco rporated products for any unintended or una uthorized application, customers shall i ndemnify and hold diodes incorporated and its representativ es harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death a ssociated with such unintended or unauthorized application. products described herein may be covered by one or more united states, international or foreign patents pending. product names and markings noted herein may also be covered by one or more united states, international or foreign trademarks. this document is written in english but may be translated into multiple languages for reference. only the english version of t his document is the final and determinative format released by diodes incorporated. life support diodes incorporated products are specifically not authorized for use as critical com ponents in life support devices or systems without the express written approval of the chief executive offi cer of diodes incorporated. as used herein: a. life support devices or syst ems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when proper ly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. b. a critical component is any component in a life support devic e or system whose failure to perform can be reasonably expect ed to cause the failure of the life support device or to affect its safety or effectiveness. customers represent that they have all necessary expertise in the safety and regulatory ramifi cations of their life support dev ices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-rel ated requirements concerning the ir products and any use of diodes incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or s ystems-related information or support that may be provided by diodes incorporated. further, customers must fully indemnify diodes incorporate d and its representatives against any damages arisi ng out of the use of diodes incorporated pr oducts in such safety-critical, life suppor t devices or systems. copyright ? 2013, diodes incorporated www.diodes.com


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